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GaN-based UV Photodiode - GS-ABC-2016S

? Broad band UVA+UVB+UVC photodiode
? Photovoltaic mode operation
? SMD 2016 package
? Good visible blindness
? High responsivity and low dark current

Model Number: GS-ABC-2016S
Data Sheet:

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Product Specification

GS-ABC-2016S UV Photodiode General Features:
? Broad band UVA+UVB+UVC photodiode
? Photovoltaic mode operation
? SMD 2016 package
? Good visible blindness
? High responsivity and low dark current

GS-ABC-2016S UV Photodiode Applications:
UV index monitoring, UV radiation dose measurement, flame detection

GS-ABC-2016S UV Photodiode Specifications:

Parameters	Symbol	Value	Unit
Maximum ratings
Operation temperature range	_Topt	-25 - 85	°C
Storage temperature range	T_sto	-40 - 85	°C
Soldering temperature (3 s)	T_sol	260	°C
Reverse voltage	V_r-max	-10	V
General characteristics (25°C)
Chip size	A	0.11	mm²
Dark current (Vr = -1 V)	I_d	<1	nA
Temperature coefficient	T_c	-0.02	%/°C
Capacitance (at 0 V and 1 MHz)	C_p	3.8	pF
Spectral response characteristics (25°C)
Wavelength of peak responsivisity	λ_p	355	nm
Peak responsivisity (at 355 nm)	R_max	0.20	A/W
Spectral response range (R=0.1×R_max)	-	210 - 370	nm
UV-visible rejection ratio (R_max/R_{400 nm})	-	>10⁴	-