UV photodiode - GT-UVV-LW
? ?Indium Gallium Nitride Based Material
? ?Photovoltaic mode operation
? ?TO-46 metal housing
? ?High responsivity and low dark current
- Model Number: GT-UVV-LW
- Data Sheet:
- Quantity:
- - +
Product Specification
1.UV photodiode（GT-UVV-LW）Product info：
Chip size 1 mm2, TO46 metal package with sapphire window, high sensitivity and low leakage, spectral response range 350-440 nm.
2.UV photodiode（GT-UVV-LW）Typical applications：
UV LED Monitoring, UV radiation dose measurement, UV Curing
3.UV photodiode（GT-UVV-LW）General Features：
? Indium Gallium Nitride Based Material
? Photovoltaic mode operation
? TO-46 metal housing
? High responsivity and low dark current
4. UV photodiode（GT-UVV-LW）Specifications：
|
Parameters |
Symbol |
Value |
Unit |
|
Maximum ratings |
|||
|
Operation temperature range |
Topt |
-25-85 |
℃ |
|
Storage temperature range |
Tsto |
-40-85 |
℃ |
|
Soldering temperature (3 s) |
Tsol |
260 |
℃ |
|
Reverse voltage |
Vr-max |
-10 |
V |
|
General characteristics (25℃) |
|||
|
Chip size |
A |
1 |
mm2 |
|
Dark current (Vr = -1 V) |
Id |
<1 |
nA |
|
Temperature coefficient |
Tc |
0.05 |
%/ ℃ |
|
Capacitance (at 0 V and 1 MHz) |
Cp |
60 |
pF |
|
Spectral response characteristics (25℃) |
|||
|
Wavelength of peak responsivisity |
λp |
390 |
nm |
|
Peak responsivisity (at 390 nm) |
Rmax |
0.289 |
A/W |
|
Spectral response range (R=0.1×Rmax) |
— |
290-440 |
nm |
|
UV-visible rejection ratio (Rmax/R400 nm) |
— |
>104 |
— |
5.UV photodiode（GT-UVV-LW） Package dimensions：
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